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Ruslan Vovk

Ruslan Vovk Mail
V. N. Karazin Kharkiv National University, Ukraine

Doctor of Physical and Mathematical Sciences, Professor

Department of Low Temperature Physics

 

Scopus profile: link

 

Selected Publications:

1. Vovk, R. V., Khadzhai, G. Y., Nazyrov, Z. F., Kamchatnaya, S. N., Feher, A., Dobrovolskiy, O. V. (2018). Annealing Effects on the Normal-State Resistive Properties of Underdoped Cuprates. Journal of Low Temperature Physics, 191 (3-4), 184–193. doi: http://doi.org/10.1007/s10909-018-1856-9 

2. Khadzhai, G. Y., Litvinov, Y. V., Vovk, R. V., Zdorovko, S. F., Goulatis, I. L., Chroneos, A. (2018). Effect of electron irradiation on the fluctuation conductivity in YBa2Cu3O7−δ single crystals. Journal of Materials Science: Materials in Electronics, 29 (9), 7725–7729. doi: http://doi.org/10.1007/s10854-018-8768-y 

3. Khadzhai, G. Y., Vovk, R. V., Prichna, T. A., Gevorkyan, E. S., Kislitsa, M. V., Solovjov, A. L. (2018). Electrical and thermal conductivity of the Ti3AlC2 MAX phase at low temperatures. Low Temperature Physics, 44 (5), 451–452. doi: http://doi.org/10.1063/1.5034158 

4. Christopoulos, S.-R., Sgourou, E., Vovk, R., Chroneos, A., Londos, C. (2018). The CiCs(SiI)n Defect in Silicon from a Density Functional Theory Perspective. Materials, 11 (4), 612. doi: http://doi.org/10.3390/ma11040612 

5. Dobrovolskiy, O. V., Sachser, R., Huth, M., Shklovskij, V. A., Vovk, R. V., Bevz, V. M., Tsindlekht, M. I. (2018). Radiofrequency generation by coherently moving fluxons. Applied Physics Letters, 112 (15), 152601. doi: http://doi.org/10.1063/1.5028213 

6. Boiko, Y. I., Bogdanov, V. V., Vovk, R. V., Khadzhai, G. Y. (2018). Some peculiarities of labile oxygen kinetics in underdoped single crystals of YBa2Cu3O7-x. Low Temperature Physics, 44 (4), 346–348. doi: http://doi.org/10.1063/1.5030463 

7. Vovk, R. V., Khadzhai, G. Y., Nazyrov, Z. F., Kamchatnaya, S. N., Feher, A., Dobrovolskiy, O. V. (2018). Influence of annealing on the electrical resistance of YBCO single crystals. Journal of Materials Science: Materials in Electronics, 29 (8), 6601–6606. doi: http://doi.org/10.1007/s10854-018-8644-9