Features of formation of microwave GaAs structures on homo and hetero-transitions for the sub-microconnection of the lsic structures

Authors

DOI:

https://doi.org/10.15587/1729-4061.2019.157212

Keywords:

complementary structures, low-temperature epitaxy, integrated circuits, buffer layer, magnetron deposition

Abstract

The features of the formation of microwave GaAs structures are considered and a set of studies is carried out to create a serial technology of large-scale integrated circuit structures (LSIC), including the number of microwaves on GaAs epitaxial layers deposited on monosilicon substrates.

The conditions for the formation of a two-dimensional electron gas in hetero-structures with the determination of electron mobility depending on the orientation of the surface were investigated. For hetero-structures on the surface of a semi-insulated GaAs substrate rotated from the plane (100) at an angle of 6–10º with oxygen content on the initial surface С0=10–50 % relative to the gallium peak of the Auger spectrum, a strong mobility anisotropy was found due to an increase in the angle of reorientation and incomplete annealing of carbon from the initial surface of the GaAs substrate.

For the deposited layers of gallium arsenide on monosilicon substrates epitaxial technology is used, which can significantly improve the purity of the obtained material, namely, significantly reduce the level of oxygen and carbon isoconcentration impurities, which strongly affect the charge state of the interface.

For the formation of structural layers on GaAs, the technology for the formation of nitride layers of Si3N4, AlN, BN by the magnetron method at low substrate temperatures and a given stoichiometry was developed and investigated. The combination of gallium epitaxial nano-silicon arsenide technology to silicon substrates became realistically possible only with the development of technology of magnetron precipitated buffer layers of germanium.

The technology of the formation of logical elements NOT, OR-NOT, AND-NOT of high speed with low threshold voltage is developed, which allows to build high-speed chips of combination and sequential types on complementary structures

Author Biographies

Stepan Novosiadlyi, Vasyl Stefanyk Precarpathian National University Shevchenka ave., 57, Ivano-Frankivsk, Ukraine, 76018

Doctor of Technical Sciences, Professor

Department of Computer Engineering and Electronics

Volodymyr Gryga, Nadvirna College of the National Transport University Soborna str., 177, Nadvirna, Ukraine, 78400

PhD, Associate professor

Bogdan Dzundza, Vasyl Stefanyk Precarpathian National University Shevchenka ave., 57, Ivano-Frankivsk, Ukraine, 76018

PhD, Senior Researcher

Department of Computer Engineering and Electronics

Sviatoslav Novosiadlyi, Ltd. SoftServe Sakharova str., 23, Ivano-Frankivsk, Ukraine, 76000

Leading Engineer

Volodymyr Mandzyuk, Vasyl Stefanyk Precarpathian National University Shevchenka ave., 57, Ivano-Frankivsk, Ukraine, 76018

PhD

Department of Computer Engineering and Electronics

Halyna Klym, Lviv Polytechnic National University Bandery str., 12, Lviv, Ukraine, 79013

Doctor of Technical Sciences, Associate professor

Department of Specialized Computer Systems

Omelian Poplavskyi, Vasyl Stefanyk Precarpathian National University Shevchenka ave., 57, Ivano-Frankivsk, Ukraine, 76018

PhD, Associate professor

Department of Life Safety

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Published

2019-02-20

How to Cite

Novosiadlyi, S., Gryga, V., Dzundza, B., Novosiadlyi, S., Mandzyuk, V., Klym, H., & Poplavskyi, O. (2019). Features of formation of microwave GaAs structures on homo and hetero-transitions for the sub-microconnection of the lsic structures. Eastern-European Journal of Enterprise Technologies, 1(5 (97), 13–19. https://doi.org/10.15587/1729-4061.2019.157212

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Section

Applied physics