Analysis of a semiconductor vibration and frequency sensor construction specifity

Authors

DOI:

https://doi.org/10.15587/2313-8416.2018.143414

Keywords:

semiconductor, filamentous monocrystal, tensotransducer, resonator, frequency, sensitive element, tensor signal, deformation

Abstract

The model of direct transducering tensoresistive method of semiconductor filamentous monocrystal mechanical oscillations into an electrical signal and the principle of deformation into frequency transducer (sensor) construction are considered in this paper. The connections of output tensor signal parameters with resonator own geometric dimensions, mechanical stress and elasticity of the crystals, amplitude and their mechanical oscillations frequency are established. The value of tensor signal, which arises due to bending and tension of monocrystals under cyclic loads, is estimated, the specificity of their properties and structure is revealed

Author Biographies

Roman Baitsar, Lviv Polytechnic National University S. Bandery str., 12, Lviv, Ukraine, 79013

Doctor of Technical Sciences, Professor

Department of Measuring Information Technologies

Roman Kvit, Lviv Polytechnic National University S. Bandery str., 12, Lviv, Ukraine, 79013

PhD, Associate Professor

Department of Mathematics

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Published

2018-10-09

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Section

Technical Sciences