Accounting for scattering in the Landauer-Datta-Lundstrom transport model
DOI:
https://doi.org/10.15587/2313-8416.2015.38847Keywords:
nanophysics, nanoelectronics, electron scattering, phonon scattering, transmission coefficient, mean free path, diffusion coefficient, mobility, Si MOSFETAbstract
Scattering of carriers in the LDL transport model during the changes of the scattering times in the collision processes is considered qualitatively. The basic relationship between the transmission coefficient T and the average mean free path is derived for 1D conductor. As an example, the experimental data for Si MOSFET are analyzed with the use of various models of reliability.
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