«Bottom – up» nanoelectronics: the hall effects, measurement of electrochemical potentials and spin transport in the NEGF model

Authors

  • Юрій Олексійович Кругляк Odessa State Environmental University, Ukraine

DOI:

https://doi.org/10.15587/2313-8416.2015.51353

Keywords:

nanoelectronics, Hall effects, chemical potential measurement, spin transport, NEGF method, graphene

Abstract

The Hall effects, measurement of electrochemical potentials, the Landauer and Buttiker approaches, an account of magnetic field in the non-equilibrium Green’s functions (NEGF) method, spin transport by the NEGF method in the spinor representation, in particular, rotating magnetic contacts and spins, Zeeman and Rashba spin Hamiltonians, calculation of the spin potential, and four-component description of spin transport are discussed in the «bottom – up» approach of modern nanoelectronics

Author Biography

Юрій Олексійович Кругляк, Odessa State Environmental University

Doctor of Chemical Sciences, Professor

Department of Information Technologies

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Fundamentals of nanoelectronics – quantum models. Available at: http://nanohub.org/courses/FoN2

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Published

2015-10-28

Issue

Section

Physics and mathematics