[1]
Верига, А.Д. and Політанський, Л.Ф. 2012. Drain detection on the mos transistor with built-in channel. Eastern-European Journal of Enterprise Technologies. 2, 5(50) (Jan. 2012), 41–45. DOI:https://doi.org/10.15587/1729-4061.2011.1789.