[1]
Новосядлий, С.П., Бойко, С.І., Мельник, Л.В. and Новосядлий, С.В. 2015. Development of technology of multicharged ion implantation of GaAs for submicron structures of large-scale integrated circuits. Eastern-European Journal of Enterprise Technologies. 6, 5(78) (Dec. 2015), 32–40. DOI:https://doi.org/10.15587/1729-4061.2015.54233.