(1)
Новосядлий, С. П.; Кіндрат, Т. П.; Мельник, Л. В.; Варварук, В. М. Physical and Technological Features of Formation of Metallization of Submicron Arsenide-Gallium Structures in Large-Scale Integrated Circuits by Ion Milling. EEJET 2013, 4, 3-6.