НОВОСЯДЛИЙ, С. П.; КІНДРАТ, Т. П.; МЕЛЬНИК, Л. В.; ВАРВАРУК, В. М. Physical and technological features of formation of metallization of submicron arsenide-gallium structures in large-scale integrated circuits by ion milling. Eastern-European Journal of Enterprise Technologies, [S. l.], v. 4, n. 5(64), p. 3–6, 2013. DOI: 10.15587/1729-4061.2013.16660. Disponível em: https://journals.uran.ua/eejet/article/view/16660. Acesso em: 29 nov. 2024.