НОВОСЯДЛИЙ, С. П.; КІНДРАТ, Т. П.; МЕЛЬНИК, Л. В. Physical and technological aspects of multicharge implantation of gallium arsenide in device and circuit structures. Eastern-European Journal of Enterprise Technologies, [S. l.], v. 5, n. 5(65), p. 29–36, 2013. DOI: 10.15587/1729-4061.2013.18109. Disponível em: https://journals.uran.ua/eejet/article/view/18109. Acesso em: 24 nov. 2024.