НОВОСЯДЛИЙ, С. П.; МЕЛЬНИК, Л. В. Effect of gallium arsenide technology on the formation of integrated circuit structures. Eastern-European Journal of Enterprise Technologies, [S. l.], v. 3, n. 5(69), p. 25–32, 2014. DOI: 10.15587/1729-4061.2014.24807. Disponível em: https://journals.uran.ua/eejet/article/view/24807. Acesso em: 22 dec. 2024.