НОВОСЯДЛИЙ, С. П.; БОЙКО, С. І.; МЕЛЬНИК, Л. В.; НОВОСЯДЛИЙ, С. В. Development of technology of multicharged ion implantation of GaAs for submicron structures of large-scale integrated circuits. Eastern-European Journal of Enterprise Technologies, [S. l.], v. 6, n. 5(78), p. 32–40, 2015. DOI: 10.15587/1729-4061.2015.54233. Disponível em: https://journals.uran.ua/eejet/article/view/54233. Acesso em: 24 dec. 2024.