РЕКОВ, Ю. В.; ЧЕРВОНИЙ, І. Ф.; ШВЕЦЬ, Є. Я.; ГОЛОВКО, Ю. В. Influencе of carbon atoms on formation of impurity complexes in silicon single crystals. Eastern-European Journal of Enterprise Technologies, [S. l.], v. 4, n. 5(58), p. 24–27, 2012. DOI: 10.15587/1729-4061.2012.5577. Disponível em: https://journals.uran.ua/eejet/article/view/5577. Acesso em: 17 jul. 2024.