ВОРОБЕЦЬ, М. М. Investigation of stability of electrophysical parameters of Si-wafers before forming porous layer. Eastern-European Journal of Enterprise Technologies, [S. l.], v. 6, n. 12(60), p. 50–52, 2012. DOI: 10.15587/1729-4061.2012.6032. Disponível em: https://journals.uran.ua/eejet/article/view/6032. Acesso em: 23 nov. 2024.