NOVOSYADLYJ, S.; DZUNDZA, B.; GRYGA, V.; NOVOSYADLYJ, S.; KOTYK, M.; MANDZYUK, V. Research into constructive and technological features of epitaxial gallium-arsenide structures formation on silicon substrates. Eastern-European Journal of Enterprise Technologies, [S. l.], v. 3, n. 5 (87), p. 54–61, 2017. DOI: 10.15587/1729-4061.2017.104563. Disponível em: https://journals.uran.ua/eejet/article/view/104563. Acesso em: 18 aug. 2024.