КУДРИНСЬКИЙ, З. Р.; КОВАЛЮК, З. Д. Low-temperature annealing effect on the properties of p-InSe–n-In2O3 heterojunctions. Eastern-European Journal of Enterprise Technologies, [S. l.], v. 1, n. 5(55), p. 25–28, 2012. DOI: 10.15587/1729-4061.2012.3380. Disponível em: https://journals.uran.ua/eejet/article/view/3380. Acesso em: 17 may. 2024.