Новосядлий, С. П., Кіндрат, Т. П. and Мельник, Л. В. (2013) “Physical and technological aspects of multicharge implantation of gallium arsenide in device and circuit structures”, Eastern-European Journal of Enterprise Technologies, 5(5(65), pp. 29–36. doi: 10.15587/1729-4061.2013.18109.