Новосядлий СП, Бойко СІ, Мельник ЛВ, Новосядлий СВ. Development of technology of multicharged ion implantation of GaAs for submicron structures of large-scale integrated circuits. EEJET [Internet]. 2015Dec.25 [cited 2024Jul.28];6(5(78):32-40. Available from: https://journals.uran.ua/eejet/article/view/54233