ENERGY STATES OF PARTICLES IN A QUANTUM SIZED STRUCTURE WITH A COMPLEX SHAPED BAND DIAGRAM
DOI:
https://doi.org/10.30837/ITSSI.2020.14.176Keywords:
energy spectrum, quantum limitation, wave function, electron, heavy hole, easy hole, quasi-continuumAbstract
The subject of research in the article is the energy spectrum of a multilayer quantum sized structure with an energy profile of a complex shape. The goal of this work is to study the interaction of quantum-confined and quasi- continuum energy states of particles under the action of an external stationary electric field applied perpendicular to the planes of quantum confinement. The following tasks were solved in the article: The spectrum of eigenfunctions and eigenvalues of particle energy is determined, both in the area of the quantum confinement and in the area of the quasi-continuum. The definition of the eigenfunctions takes into account the fact that the phase of the eigenfunctions changes due to the motion of particles over the quantum well. The following methods were used to solve the set tasks: quantum mechanical modeling of stationary states in a structure with an energy profile of a complex shape; methods of the theory of small perturbations for describing the interaction of particles in such a structure. The following results were obtained: the basic calculation relations of the mathematical model of the energy states of particles and quasiparticles in quantum-limited and quasi-continuum states were obtained within the framework of the quantum-mechanical approach. The interaction of energy states of particles and quasiparticles in each of the bands between quantum-confined and quasi-continuum states is described depending on the external influence. The theory of small perturbations is applied in the paper to assess the degree of interaction. Conclusions: Analysis of the results of modeling the energy spectrum of a structure with two quantum wells, calculated for an unperturbed state and for the case of external action in the form of a stationary electric field, leads to the following conclusions: in the absence of an external field acting on the considered quantum well structure, electrons and holes located above the separation barrier are characterized by a non-monotonically increasing spectrum of energy states. In this case, the particles are predominantly localized above the quantum wells; the action of a constant external electric field on the structure under consideration leads to the manifestation of the quantum-limited Stark effect both for solitary and for multilayer periodic quantum well structures. In this case, the delocalization of the wave functions and the shift of the corresponding energy levels (the lowest energy levels in the structure under consideration) is expressed as strongly as in multilayer symmetric structures. At the same time, the effect is almost invisible for the higher levels. This is especially pronounced for the energy levels lying above the separation barrier. Thus, it can be expected that an equidistant energy spectrum can be realized at a certain external field strength, which in turn should simplify significantly the attainment of the second harmonic generation mode if the structure under consideration is used in the active region of a semiconductor laser.
References
Abramov, I. I., Goncharenko, I. A., Kolomeitseva, N. V. (2007), "Combined two-zone model of a resonant tunneling diode" ["Kombinirovannaya dvukhzonnaya model' rezonansno-tunnel'nogo dioda Fizika i tekhnika poluprovodnikov"], Physics and technology of semiconductors, Vol. 41, No. 11, P. 1395–1400.
Xue, D., Lai, J., Tu, W., Zhang, W., Seng, Y., Guo, T. (2016), "2D-simulation of Inverted Metamorphic GaInP/GaAs/In0.3Ga0.7As/In0.58 Ga0.42As", Four-junction Solar Cell. Proc. Int. Conf. on Power Engineering & Energy, Environment (PEEE 2016), ShangHai, China.
Pashchenko, A. G., Vantsans, V. M. (2012), "Carriers localization in the multilayered nanostructures stipulated by interference redislocation of wave functions", Telecommunications and Radio Engineering, Vol. 71, No. 17, Р. 1599–1604. DOI: https://doi.org/10.1615/TelecomRadEng.v71.i17.70
Galiev, G. B., Klimov, E. A., Klochkov, A. N., Kopylov, V. B., Pushkarev, S. S. (2019), "Electrophysical and photoluminescent study of epitaxial superlattices {LT-GaAs/GaAs : Si} on GaAs (100) and (111)A substrates", Semiconductor physics and technology, Vol. 53, No. 2, P. 258–267. DOI: https://doi.org/10.21883/FTP.2019.02.47110.8918
Mamutin, V. V., Maleev, N. A., Vasilyev, A. P., Ilyinskaya, N. D., Zadiranov, Yu. M., Usikova, A. A, Yagovkina, M. A., Shernyakov, Yu. M., Ustinov, V. M. (2018), "Investigation of modified structure for quantum cascade lasers", Semiconductor physics and technology, Vol. 52, No. 1, P. 133–138. DOI: https://doi.org/10.21883/FTP.2018.01.45332.8630
Herbert, Li E. (1997), "Optical Properties of an InGaAs-InP Interdiffused Quantum Wells", IEEE J. Quantum Electronics, Vol. 34, No. 6, P. 1422–1431.
Lawaetz, P. (1971), "Valence - band parameter in cubic semiconductors", Phys. Rev. B., Vol. 4, No. 10, P. 3460–3467.
Manyakhin, F. I. (2018), "The mechanism and regularity of decrease in the light stream of light-emitting diodes on the bases of structures AlGaN/InGaN/GaN with quantum wells at long courese of derect current of various density", Semiconductor physics and technology, Vol. 52, No. 3, P. 378–385. DOI: https://doi.org/10.21883/FTP.2018.03.45625.8341
Altukhov I.V., Dizhur S.E., Kagan M.S., Khvalkovskiy N.A., Paprotskiy S.K., Vasil'evskii I.S., Vinichenko A.N. Transport in Short-Period GaAs/AlAs Superlattices with Electric Domains. Semiconductor physics and technology 2018. т. 52. № 4, С. 472 – 473. DOI: https://doi.org/10.21883/FTP.2018.04.45821.10
Shashkin, I. S., Leshko, A. Y., Nikolaev, D. N., et al (2020), "Light characteristics of narrow-stripe high-power semiconductor lasers (1060 nm) based on asymmetric AlGaAs/GaAs heterostructures with a broad waveguide", Semiconductor physics and technology, Vol. 54, No. 4, P. 408–413. DOI: https://doi.org/10.21883/FTP.2020.04.49149.9333
Slipchenko, S. O., Podoskin, A. A., Soboleva, O. S., et al (2020), "Investigations of the processes of charge carrier transport in isotype heterostructures of the n +-GaAs/n 0 -GaAs/n +-GaAs type with a thin wide-gap AlGaAs barrier", Semiconductor physics and technology, Vol. 54, No. 5, P. 452–457. DOI: https://doi.org/10.21883/FTP.2020.05.49258.9344
Sobolev, M. M., Soldatenkov, F. Y. (2020), "Capacitance spectroscopy of heteroepitaxial AlGaAs/GaAs p−i−n structures", Semiconductor physics and technology, Vol. 54, No. 10, P. 1072–1078. DOI: https://doi.org/10.21883/FTP.2020.10.49945.9419
Kurdyubov, A. S., Gribakin, B. F., Mikhailov, A. V., Trifonov, A. V., Efimov, Yu. P., Eliseev, S. A., Lovtcius, V. A., Ignatiev, I. V. (2020), "Energy spectrum in a shallow GaAs/AlGaAs quantum well probed by spectroscopy of nonradiative broadening of exciton resonances", Semiconductor physics and technology, Vol. 54, No. 11, P. 1261–1262. DOI: https://doi.org/10.1134/S1063782620110172
Miyazawa, T. (2008), "Electric field modulation of exciton recombination in InAs/GaAs quantum dots emitting at 1.3 μm.", J. Appl. Phys., No. 104, P. 013504.
Tsu, R., Esaki, L. (1973), "Tunneling in a finite superlattice", Appl.Phys. Lett, Vol. 22, No. 11, P. 562–564.
Chang, L., Eski, L., Tsu, R. (1974), "Resonant tunneling in semiconductors double barrier", Appl. Phys. Lett, Vol. 24, No. 12, P. 593–595.
Balagula, R. M., Vinnichenko, M. Ya., Makhov, I. S., Firsov, D. A., Vorobjev, L. E. (2016), "Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under lateral electric field", Semiconductor physics and technology, Vol. 50, No. 11, P. 1445–1462. DOI: https://doi.org/10.21883/ftp.2016.11.43770.2
Spirin, K. E., Gaponova, D. M., Maremyanin, K. V., et al (2018), "Bipolar persistent photoconductivity effects in HgTe/CdHgTe (013) double quantum well heterostructures", Semiconductor physics and technology, Vol. 52, No. 12, P. 1482–1485. DOI: https://doi.org/10.21883/FTP.2018.12.46761.41
Ferreira, R., Rolland, P., Roussignol, Ph., Delalande, C., Vinattieri, A., Carraresi, L., Colocci, M., Roy, N., Sermage, B., Palmer, J. F., Etienne, B. (1992), "Time-resolved exciton transfer in GaAs/AlxGa1-xAs double-quantumwell structures", Phys. Rev. B., Vol. 45, No. 20, P. 11782–11794.
Miller, D. A. B., Chemla, D. S., Damen, T. C., Gossard, A. C., Wiegmann, W., Wood, T. H., Burrus, C. A. (1984), "Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect", Phys. Rev. Letters B., Vol. 53, No. 22, P. 2173–2176.
Miller, D. A. B., Chemla, D. S., Damen, T. C., Gossard, A. C., Wiegmann, W., Wood, T. H., Burrus, C. A. (1985), "Electric field dependence of optical absorption near the band gap of quantum-well structures", Phys. Rev. B., Vol. 32, No. 2, P. 1043–1060.
Mitsuru Matsuura, Tsuneo Kamizato (1986), "Subbands and excitons in a quantum-well in an electric field" Phys. Rev. B, Vol. 33, No. 12, P. 8385–8389.
Anemogiannis, E., Glytsis, E. N., Gaylord, T. V. (1998), "Quasi - Bound States Determination Using a Perturbed Wavenumbers Method in a Large Quantum Box", IEEE J. Quantum Electronics, Vol. 33, No. 5, P. 742–752.
Luttinger, J. M., Kohn, W. (1955), "Motion of Electrons and Holes in Perturbed Periodic Fields", Phys. Rev. Ser. B., Vol. 97, No. 4. P. 869–883.
Tung Sun Koh, Yan Ping Feng, Harold, N. (1997), "Spector. Effects of Electric Field on the Exciton Linewidth Broadening Due to Scattering by Free Carriers in Semiconducting Quantum Well Structurez", IEEE J Quant. Electron, Vol. 33, No. 10, P.1567–1572.
Downloads
Published
How to Cite
Issue
Section
License
Copyright (c) 2020 Alexey Pashchenko, Oleksandr Gritsunov, Oksana Babichenko
This work is licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International License.
Our journal abides by the Creative Commons copyright rights and permissions for open access journals.
Authors who publish with this journal agree to the following terms:
Authors hold the copyright without restrictions and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International License (CC BY-NC-SA 4.0) that allows others to share the work with an acknowledgment of the work's authorship and initial publication in this journal.
Authors are able to enter into separate, additional contractual arrangements for the non-commercial and non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgment of its initial publication in this journal.
Authors are permitted and encouraged to post their published work online (e.g., in institutional repositories or on their website) as it can lead to productive exchanges, as well as earlier and greater citation of published work.