ГОЛОВКО, О. К. Influence of impurity on the life period of the charge in silicon single crystals. Technology audit and production reserves, [S. l.], v. 3, n. 1(5), p. 31–32, 2012. DOI: 10.15587/2312-8372.2012.4735. Disponível em: https://journals.uran.ua/tarp/article/view/4735. Acesso em: 22 nov. 2024.