ДМИТРІЄВ, В. С. Features of forming ohmic contacts on basis of GaAs. Technology audit and production reserves, [S. l.], v. 3, n. 1(5), p. 35–36, 2012. DOI: 10.15587/2312-8372.2012.4737. Disponível em: https://journals.uran.ua/tarp/article/view/4737. Acesso em: 28 jul. 2024.