ПОРЄВ, В. А.; БОЖКО, К. М.; СИДОРЕНКО, С. Ю. Corona discharge initiation for TV control of defects in crystalline silicon. Technology audit and production reserves, [S. l.], v. 1, n. 1(27), p. 28–31, 2016. DOI: 10.15587/2312-8372.2016.60301. Disponível em: https://journals.uran.ua/tarp/article/view/60301. Acesso em: 25 nov. 2024.