ВОЛЯР, Р. Н. Influence of impurities and conditions of growing the silicon single crystals by Czochralski method on the value of lifetime of non-equilibrium charge carriers. Technology audit and production reserves, [S. l.], v. 1, n. 4(21), p. 50–54, 2015. DOI: 10.15587/2312-8372.2015.38119. Disponível em: https://journals.uran.ua/tarp/article/view/38119. Acesso em: 4 may. 2024.