ЕГОРОВ, С. Г. About the role of melt movement during of the silicon single crystal growth by FZ method. Technology audit and production reserves, [S. l.], v. 3, n. 1(5), p. 19–20, 2012. DOI: 10.15587/2312-8372.2012.4729. Disponível em: https://journals.uran.ua/tarp/article/view/4729. Acesso em: 28 apr. 2024.