ГОЛОВКО, Ю. В. Impurity segregation during growth of silicon single crystals. Technology audit and production reserves, [S. l.], v. 3, n. 1(5), p. 29–30, 2012. DOI: 10.15587/2312-8372.2012.4734. Disponível em: https://journals.uran.ua/tarp/article/view/4734. Acesso em: 7 may. 2024.