Spectral composition of radiation under the bombardment of surface of the silicon by ions and electrons of middle energies
DOI:
https://doi.org/10.24144/2415-8038.2007.20.150-153Keywords:
Electron-photon emission, Ion-photon emissionAbstract
By the method of electron-photon and ion-photon emission spectral structure of
the surface of silicon at electron and ions bombardment of medium energies is investigated.The revealed features in the received spectra are explained. The absolute output of photons from a surface of silicon at bombardment electrons with energy 800 eV in a range of lengths of waves of 200-800 nanometers which makes N ≈ 6,9*10-4 phot./el. is calculated.
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