Mechanical processing of sapphire crystals and producing substrates of them

Authors

  • Д. І. Блецкан Науково-виробнича фірма “Технокристал”, Ужгородський національний університет, Ukraine
  • О. Д. Блецкан Scientific-production firm “Technocrystal”, Uzhhorod national university, Ukraine
  • О. Р. Лук’янчук Scientific-production firm “Technocrystal”, Uzhhorod national university, Ukraine
  • А Л Машков Scientific-production firm “Technocrystal”, Uzhhorod national university, Ukraine
  • Я. М. Пекар Scientific-production firm “Technocrystal”, Uzhhorod national university, Ukraine

DOI:

https://doi.org/10.24144/2415-8038.2000.7.161-173

Keywords:

Sapphire, Gallium nitride (GaN), Heteroepitaxy

Abstract

The main stages of the producing technology of sapphire plates of (0001) orientation with the basic plane (112̅0) for GaN heteroepitaxy are described.

References

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Ponce F.A., Bour DP. Nitride-based semiconductors for blue and green light-emitting devices. -Nature. 1997. V.386. P.351-359.

Мокеев О.К., Романов А С. Технология полупроводникового производства. - М.: Высш. школа. 1984.

Блецкан Д.І., Блецкан О.Д., Лук'янчук О.Р., Машков A.I., Пекар Я.М., Цифра В.І. Промислове вирощування моно-кристалів сапфіра видозміненим методом Кіропулоса. - Науковий вісник Ужгородського університету. Серія фізика. 2000. №6. С.221-240.

Рубин и сапфир. Под ред. Классен-Неклюдовой М.В., Багдасарова X С. -М.: Наука. 1974. 236 с.

Шубников А.В. Оптическая кристаллография. М.: Изд-во АН СССР. 1950. 275 с.

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Published

2000-12-31

Issue

Vol. 7 (2000)

Section

Статті

License

Copyright (c) 2000 Scientific Herald of Uzhhorod University.Series Physics

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