Emission of pure and doped silicon exposed to electrons

Authors

  • М. І. Лінтур Uzhhorod National University, Ukraine
  • М. В. Приходько Uzhhorod National University, Ukraine
  • Л. М. Маркович Uzhhorod National University, Ukraine
  • Н. Аль-Дургам Uzhhorod National University, Ukraine
  • С. С. Поп Uzhhorod National University, Ukraine

DOI:

https://doi.org/10.24144/2415-8038.2003.14.134-137

Abstract

The features in the surface emission spectra of pure and B+-, P+- and As+-ion doped silicon under bombardment by 800-eV electron beam arc revealed. The spectra arc studied within 200-800 nm range. All the spectra exhibit a broad band centred near 280 nm as well as characteristic radiation of excited hydrogen atoms and OH radical desorbed from the surface. The dependence of the molecular OH band intensity on the energy of the bombarding electrons is measured and shown to be of resonant character with a threshold near 35 eV.

References

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Published

2003-12-25

Issue

Vol. 14 (2003)

Section

Статті

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Copyright (c) 2003 Scientific Herald of Uzhhorod University.Series Physics

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