PHOTOLUMINESCENCE SPECTRA OF HIGH-ENERGY ELECTRON-IRRADIATED CdS<sub>1-x</sub>Se<sub>x</sub> CRYSTALS

Authors

  • Ю. М. Ажнюк Institute of Electron Physics, Ukr. Nat. Acad. Sci., Universytetska St. 21, Uzhhorod 294016, Ukraine
  • О. В. Гомоннай Institute of Electron Physics, Ukr. Nat. Acad. Sci., Universytetska St. 21, Uzhhorod 294016, Ukraine
  • Д. Б. Гоєр Institute of Electron Physics, Ukr. Nat. Acad. Sci., Universytetska St. 21, Uzhhorod 294016, Ukraine
  • І. Г. Мегела Institute of Electron Physics, Ukr. Nat. Acad. Sci., Universytetska St. 21, Uzhhorod 294016, Ukraine
  • Л. Г. Романова Institute of Electron Physics, Ukr. Nat. Acad. Sci., Universytetska St. 21, Uzhhorod 294016, Ukraine

DOI:

https://doi.org/10.24144/2415-8038.1999.4.22-27

Abstract

Photoluminescence spectra of mixed CdS1-xSex single crystals (0 < x < 0.6), irradiated at 77 and 300 K by 10-MeV electrons, their fluence being varied from 1016 to 1018 cm2, are studied. The irradiation is shown to result in the formation of isolated defects, not their clusters in CdS1-xSex. The irradiation dose dependences of the photoluminescence band intensities in the visible spectral range are analyzed, the models for the corresponding recombination centres being discussed.

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Published

1999-06-25

Issue

Vol. 4 (1999)

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Статті

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Copyright (c) 1999 Scientific Herald of Uzhhorod University.Series Physics

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