The influence of the production method on the photoconductivity spectra of GеS layered crystals

Authors

  • Д. І. Блецкан Uzhgorod State University, Ukraine
  • Й. Й. Маляр Uzhgorod State University, Ukraine
  • С. В. Микуланинець Uzhgorod State University, Ukraine
  • М. Ю. Січка Uzhgorod State University, Ukraine

DOI:

https://doi.org/10.24144/2415-8038.1999.4.151-158

Abstract

The effect of the structural perfection of GеS layered crystals on their photoconductivity (PC) spectra has been studied. It is shown that in GеS crystals obtained by the sublimation method with the most perfect structure the spectral distribution of PC is determined by the spectral course of the absorption coefficient in the fundamental absorption edge (where αd<<1) and the spectral dependence of the reflection coefficient R in the region, where αd>1. The photosensitivity in the range of hν<1,7 eV at low temperatures is explained by the photoactive absorption on the impurity levels formed by isoelectronic impurities Si and Sn. According to the PC spectra in E||a and E||b polarization the character of anisotropy of photoactive absorption of GeS is analyzed. The split of the long-wave end in a polarized light and the thin structure of PC spectra to the correspondence of the structure to GeS. The effect of the state of the surface caused by the cleavage of the bulk crystal and the presence of a one-dimensional disordering due to the package defects on the PC spectra in the depth of the fundamental absorption are discussed.

References

Блецкан Д.И. Спектры фотопроводимости монокристаллов GeS // ФТП. - 1980. - Т.14, №6. - С.1222-1224.

Блецкан Д.И. Фотоэлектрические свойства кристаллического и аморфного GeS // Укр. физ. журнал. - 1984. - Т.29, №3. - С.564-567.

Блецкан Д.И., Полажинец Н.В. Интерференционные осцилляции фототока в слоистых кристаллах GeS // Укр. физ. журнал. - 1983. - Т.28, №8. - С.1233-1235.

Wiley J.D., Pennington S., Schönherr E. Anisotropy of the intrinsic photocondactivity of GeS // Phys. Stat. Sol. (b). - 1979. - Vol.96, No1. - P. K43-K46.

Schönherr E. The growth of large crystals from the vapor phase // Growth and Properties. Berlien. - 1980. - P.51-118.

Wiley J.D., Thomas D., Schönherr E., Breitschwerdt A. The absorption edges of GeS and Urbach’s rule // J. Phys. Chem. Solids. - 1980. - Vol.41, No7. - P.801-808.

Grandke T., Ley L. Angular - resolved UV photoemission and the band structure of GeS // Phys. Rev. B. - 1977. - Vol.16, No2. - P.832-842.

Valiukonis G., Gashimzade F.M., Guseinova D.A., Krivaite G., Kulibekov A.M., Orudzhev G.S., Sileika A. Reflectance and thermoreflectance spectra and energy band structure of GeSe crystals // Phys. Stat. Solidi (b). - 1983. - Vol.117, No1. - P.81-92.

Wiley J.D., Вискеl W.J., Braun W, Fehrenbach G.W., Himpsel F.J., Koch E.E. Reflectivity of single-crystal GeS from 0,1 to 30 eV // Phys. Rev. B. - 1976. - Vol.14. No2. - P.691-701.

Lukes F., Schmidt E., Humlicek J., Dub P. Optical properties of GeS // Phys. Stat. Solidi (b). - 1984. - Vol.122, No2. - P.675- 686.

Девятых Г.Г., Краснова С.Г., Прончатов А.Н. Термодинамика взаимодействия расплава германия с кварцевым стеклом // Изв. АН СССР. Неорган. материалы. - 1987. - Т.23, №6. - С.1027-1030.

Senske W., Street R.A., Nowitzki А., Wiesner P.J. Luminescence of excitons in GeS // J. Luminiscence. - 1978. - Vol.16, No3. - P.343-352.

Шкловский Б.И., Эфрос А.Л. Межзонное поглощение света в сильно легированных полупроводниках // ЖЭТФ. - 1970. - Т.59, №10. - С.1343-1352.

Downloads

Published

1999-11-25

Issue

Vol. 4 (1999)

Section

Статті

License

Copyright (c) 1999 Scientific Herald of Uzhhorod University.Series Physics

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Authors who publish with this journal agree to the following terms:
    1. Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.
    2. Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgement of its initial publication in this journal.
    3. Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).