The tunneling electrons through the nonstationary, non-symmetric magnetic tunnel junctions

Authors

  • D. Abdulkadyrov Institute Usikov Institute of Radiophysics and Electronics of the National Academy of Sciences of Ukraine, K, Ukraine
  • N. Beletskii Institute Usikov Institute of Radiophysics and Electronics of the National Academy of Sciences of Ukraine,, Ukraine

DOI:

https://doi.org/10.24144/2415-8038.2011.29.18-25

Keywords:

Magnetic resistance, Tunneling.

Abstract

In this paper we investigate tunneling of electrons through a non-stationary nonsymmetric magnetic tunnel junction (MTJ) in the approximation of small amplitude of a.c. bias voltage. We study the influence of non-symmetry of MTJ potential barrier on the effect of giant tunneling magnetoimpedance. In addition we analyze the effect of potential barrier width and d.c. bias voltage value on the frequency dependence of giant tunneling magnetoimpedance.

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Published

2011-06-30

Issue

Vol. 29 (2011)

Section

Статті

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