“PHOTOSENSITIVE HETEROSTRUCTURE - CHALCOGENIDE SCINTILLATOR” DETECTORS OF IONIZING RADIATION BASED ON A<sup>II</sup>B<sup>VI</sup> COMPOUNDS

Authors

  • I. Zenya Institute for Scintillation Materials, Ukr. Nat. Acad. Sci., Ukraine
  • A. Galat Institute for Scintillation Materials, Ukr. Nat. Acad. Sci., Ukraine
  • P. Gashin State University of Moldova, Moldova, Republic of
  • B. Grinyov Institute for Scintillation Materials, Ukr. Nat. Acad. Sci., Ukraine
  • A. Focsha State University of Moldova, Moldova, Republic of
  • V. Ryzhikov Institute for Scintillation Materials, Ukr. Nat. Acad. Sci., Ukraine
  • V. Seminozenko Institute for Scintillation Materials, Ukr. Nat. Acad. Sci., Ukraine
  • N. Starzhinskiy Institute for Scintillation Materials, Ukr. Nat. Acad. Sci., Ukraine

DOI:

https://doi.org/10.24144/2415-8038.2007.21.165-168

Abstract

Methods for preparation of photosensitive structures nZnSe(Te)-pZnTe and ZnSe(Te)/pZnTe-nCdSe are considered. The methods use solid-phase substitution reactions and subsequent epitaxial growth on ZnSe(Te) crystals. It has been shown that maximum e.m.f. value for integrated detectors is 1.2-1.4 V, and their X-ray sen­sitivity reaches values up to 150-200 nAmin/Rcm2. Dynamic linearity range of output characteristics of the detectors was not less than 105, afterglow level after 20 ms - less than 0.05 %, allowing to use them in X-ray tomographs.

References

V.D.Ryzhikov, V.I.Silin, N.G.Starzhinskiy, Nucl.Tracks Radiat.Meas. 21, 53 (1993).

L.V.Atroshchenko, S.F.Burachas, L.P.Gal’chinetskii, B.V.Grinyov, V.D.Ryzhikov, N.G.Starzhinskiy, Scintillation crystals and radiation detectors based on them (Naukova Dumka, Kyiv,1998), pp.167-310.

V.D.Ryzhikov, V.V.Chernikov, L.P.Gal’chinetskii, J. Crystal Growth, 197, 655 (1999).

P.Gashin, A.Focsha, Solar En.Mater and Solar Cells, 46, 323 (1997).

P.P.Gorbik, M.A.Mazin, V.D.Ryzhikov, Elect.Techn., 1, 36 (1987).

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Published

2007-08-05

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