Dynamics of ferroelectric crystal domain walls

Abstract

For the description of domain boundary in weak external electric field is offered model at which domain wall in one or several points is considered fixed by defects of a crystal. Domain wall is saved parallel to a direction of spontaneous polarization. Outgoing from this model the contributions to true and imaginary parts of complex dielectric susceptibility e_w^’ and e_w^’’, stipulated oscillation of domain boundaries, and obvious kind of temperature relations e_w^’ and e_w^’’ are calculated in cases of low and high temperatures. Sharp decreasing of dielectric susceptibility in the field near 200K and appropriate maximum e^’’ stipulated by reduction of mobility, i.e. by "freezing" of domain structure.