Dielectric properties in electric SbSJ, mechanical and temperature fields

Authors

  • Д. І. Кайнц Uzhhorod national university, Ukraine
  • А. А. Горват Uzhhorod national university, Ukraine
  • Ю. С. Наконечний Uzhhorod national university, Ukraine

DOI:

https://doi.org/10.24144/2415-8038.1999.5.44-49

Keywords:

Dielectric properties, fields, temperature

Abstract

One of the simplest ways to control the concentration of domain boundaries is the application of displacement electric fields to the crystal. Consider the effect of the displacement fields on the low-temperature anomalies of dielectric permittivity. The coercive fields of individual domains are statically distributed, therefore, with the increase of the mixing field, the concentration of the domain boundaries will gradually decrease rather than jump.

References

В.Фридкин, Сегнетоэлектрики-полупроводники-Москва: Наука, 1976.

А.Люков.Теория теплопроводности. Москва: Высшая школа, 1967.

А.Горват, Д.Кайнц, Ю.Наконечний, Особливості кінетики фазового переходу 1 роду в моно- і полідоменних сегнетоелектричних кристалах. -Вісник Ужгородського Державного Університету, №2 ,1998.

Д.Берча, И.Берча, И.Туряниця и др,Изменения симетрии кристаллов SbSJ при фазовом переходе второго рода" Физика твердого тела, 11. №6, 1969.

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Published

1999-12-31

Issue

Vol. 5 (1999)

Section

Статті

License

Copyright (c) 1999 Scientific Herald of Uzhhorod University.Series Physics

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