Schottki barriers on the base of Al-CdTe:V structures

Authors

  • C. Ю. Паранчич Chemivtsi National University Kotsyubynskoho, Ukraine
  • Ю. В. Танаскж Chemivtsi National University Kotsyubynskoho, Ukraine

DOI:

https://doi.org/10.24144/2415-8038.2001.10.130-133

Abstract

Metal-semiconductor contacts have been manufactured on the base of Al-CdTe:V with doping concentrations NV = 5x1018-5x1019 см-3. The electrical properties of the formed structures have been studied. The (1- V) characteristics of the samples at different external temperatures are presented. According to the obtained results, the samples on the base of CdTe:V with vanadium concentration AV=5x1018 cm-3show clear rectification. The potential barrier height was established to be within the range of 0.7-0.78 eV. At the same time, the measured (1-V) characteristics of the Al-CdTe:V samples with NV = 5X1019CM-3 were strictly linear in both biasing directions, proving A1 to make good Ohmic contact to CdTe.V. The resistivity of the contact for the different structures was estimated to be 7x10-3 ± 1.2x102Ωcm-3

References

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Published

2001-12-31

Issue

Vol. 10 (2001)

Section

Статті

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Copyright (c) 2001 Scientific Herald of Uzhhorod University.Series Physics

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