Condenson states dynamics in the layered crystals of the indium selenides under elastic deformations

Authors

  • L. Yu. Kharkhalis Institute for Solid State Physics and Chemistry, Uzhgorod National University, Ukraine
  • K. E. Gluchov Institute for Solid State Physics and Chemistry, Uzhgorod National University, Ukraine
  • Т. Ya. Babuka Institute for Solid State Physics and Chemistry, Uzhgorod National University Institute of Physics, Jan Dlugosz University in Czestochowa, Ukraine
  • М. V. Lyakh Institute for Solid State Physics and Chemistry, Uzhgorod National University, Ukraine
  • O. Dulkai Institute for Solid State Physics and Chemistry, Uzhgorod National University, Ukraine

DOI:

https://doi.org/10.24144/2415-8038.2018.44.9-22

Keywords:

Indium selenides, Dispersion law with low-energy non-parabolicity, Homogeneous deformation, Condenson states

Abstract

The conditions of self-consistent localized state formation connected with the interaction between an electron and the longitudinal acoustic phonon in the In4Se3 and b-InSe crystals have been investigated. In the consequence of studying of the deformation influence on the dispersion law with the low-energy non-parabolicity the evolution of appearance or disappearance of the condenson states have been established. The main characteristics such as binding energy and localization radii of the condenson states are determined.

References

Дейген М.Ф., Пекар С.И. О состоянии электрона проводимости в идеальном гомеополярном кристалле// ЖЭТФ.-1951.- Т. 21(7).- С. 803-808.

Кочелап В.А., Соколов В.Н., Венгалис Б.Ю. Фазовые переходы в полупроводниках с электрон-фононным взаимодействием.- Наукова Думка, Kиев, 1984.

Кибис О.В. Образование конденсонов в квазидвумерных слоях дырочных полупроводников//ФТП.- 1995.- Т.29, № 1.-С. 125- 132.

Берча Д.М., Хархалис Л.Ю., Берча А.И., Шнайдер М. Низкоэнергетическая непараболичность и конденсонные состояния в кристалле In4Se3// ФТП.- 1997.- Т.31, №11.- С. 1299-1303.

Bercha D.M., Kharkhalis L.Yu., Bercha A.I., Sznajder M. Band Structure and Condenson States in In4Se3 Crystals// Phys. Stat. Sol (b).- 1997.- V. 203. - P. 427 - 440.

Sznajder M., Rushchanskii K.Z., Kharkhalis L.Yu., Bercha D.M. Similarities of the band structure of In4Se3 and InSe under pressure and peculiarities of the creation of the band gap//Phys. Stat. Sol. (b). -2006.- V.243, No.3.- P. 592–609.

Берча Д.М., Хархаліс Л.Ю., Шнайдер М., Рущанський К.З., Сліпухіна І.В. Наслідки низькоенергетичної непараболічності законів дисперсії для фізичних параметрів та прояві нових ефектів в сильно анізотропних кристалах// Журнал фізичних досліджень.- 2008.- Т. 12 (4).- С.4604-1- 4604-6.

Lim Y.S., Jeong M., Seo W.-S., Lee J.-H., Park C.H., Sznajder M., Kharkhalis L.Yu., Bercha D.M., Jang J. Condenson state and its effects on thermoelectric properties in In4Se3// J.Phys.D.: Appl.Phys..- 2013.- V. 46. –P.275304-275308.

Jeong M., Lim Y.S., Seo W.-S., Lee J.-H., Park Ch.-H., Sznajder M., Kharkhalis L.Yu., Bercha D.M., Yang J. Condenson-related thermoelectric properties and formation of coherent nanoinclusions in Te-substituted In4Se3// Journ. of Materials Chemistry A.-2013.- V. 1.- P. 15342-15347.

Rhyee J.-S., Lee K.H., Lee S.M., et al. Peierls distorsion as a route to high thermoelectric performance in In4Se32d// Nature.- 2009.-V.459, No.18.- P. 965-968.

Hogg J.H.C., Sutherland H.H., Williams D.J. Crystallographic Evidence for the existence of the phases In4Se3 and In4Te3 which contain the homonuclear triatomic cation (In3)5+// Chem.Communs. -1971.- No 23. – P.1568-1569.

Hogg J.H.C., Sutherland H.H., Williams D.J. The crystal Structure of In4Se3// Acta Crystallogr.- 1973.- B.29, No. 8.- P. 1590-1593.

Берча Д.М., Мытын О.Б., Хархалис Л.Ю., Берча А.И. Природа особенностей зонного спектра кристалла In4Se3 ФТТ.- 1995.-Т.37, № 11.-С.3233-3240.

Sznajder М., Lim Y.S., Glukhov K.E., Kharkhalis L.Yu., Bercha D.M. Parameters of an unique condenson state in the structure of the In4Se3 crystal// Acta Physica Polоnica A., 2012.- V.122, No. 6.- P.1115 – 1117.

Сліпухіна В.В., Хархаліс Л.Ю., Берча Д.М. Вплив зсувних деформацій (і домішок впровадження на закони дисперсії шаруватих кристалів In4Se3/ /Uzhgorod University Scientific Herald. Series Physics.- 2006.- № 19.- С. 14-19.

Бир Г.Л., Пикус Г.Е. (1972). Симметрия и деформационные эффекты в полупроводниках, Наука, Москва, 1972, 584 с.

Т.Ya.Babuka, K.E. Glukhov. Investigation of the energy and structural parameters of strained (β-InSe)n/(In4Se3)m superlattices// Superlattices and Microstructures.- 2016.- Р. 1-10.

Olguin D., Cantarero A., Ulrich C., et al. Effect of pressure on structural properties an energy band gaps of β-InSe// Phys.Stat.Sol. (b).- 2003.- V.235, No. 2.- P. 256 - 463.

G. da Costa P., Dandrea R.G., Wallis R.F., Balkanski M. First princples study of the electronic structure of -InSe and β- InSe // Phys. Rev. B.-1993.-V.48, No. 19.- P. 14135-14141.

Segura A., Manjon F.J., Errandonea D., et al. Specific features of the electronic structure of III-VI layered semiconductors: recent results on structural and optical measurements under pressure and electronic structure calculations//Phys.Stat.Sol (b).- 2003.- V.235, No.2.- P. 267.

Manjon F.J., Errandonea D., Segura A., et al. Experimental and theoretical study of band structure of InSe and In1-xGaxSe (x<0.2) under high: direct to indirect crossovers//Phys. Rev. B. -2001.- V. 63.- P. 125330-1-125330-12.

Бабука Т.Я., Глухов К.Є. Моделювангня енергетичних станів напружених гетероструктур на основі β-InSe/In4Se3// Uzhgorod University Scientific Herald. Series Physics.- 2014.- №. 36.- С. 7-12.

Беленький Г.Л., Салаев Е.Ю., Сулейманов Р.А. Деформационные эффекты в слостых кристаллах //УФН.-1988.- Т. 31, № 5.- З. 434–455.

Lee M.H., Rhyee J.S., Vaseem M., et al. Thermoelectric properties of SrTiO3 nano-particles dispersed indium selenide bulk composites. Applied Physics Letters.- 2013.- V. 102. - P. 223901-1-223901-4.

Downloads

Published

2018-12-31

Issue

Vol. 44 (2018)

Section

Статті

License

Copyright (c) 2018 Scientific Herald of Uzhhorod University.Series Physics

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Authors who publish with this journal agree to the following terms:
    1. Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.
    2. Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgement of its initial publication in this journal.
    3. Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).