n<sup>+</sup> - n - InSe - n<sup>+</sup> photo transistor on the base of a symmetric heterojunction
DOI:
https://doi.org/10.24144/2415-8038.2005.17.95-98Abstract
A possibility of fabrication of an oxide-InSe-oxide double symmetric heterojunction all the components of which have n-tуре conductivity is shown. The phototransistor effect is found to be observed in a wide range of base thickness: from 7 up to 110 m.A considerable photocurrent amplification is realized only for the base sample thickness comparable to the minority carrier diffusion length. A specific feature of the amplification is that the transition of phototransistor from the high-resistance state to the low-resistance one takes place at fixed voltages and levels of illumination. In the switching mode a significant current density of about 200 mA/cm2 is attained The higher is illumination level the lower becomes the transition voltage. Photosensitivity of the structures in the wavelength range of 0.6-1.0 m is shown.
References
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