Photoluminescence of crystalline and glassy lead thiogermanate
DOI:
https://doi.org/10.24144/2415-8038.2018.44.64-74Keywords:
Lead thiogermanate, Photoluminescence, Temperature quenching of PL, Excitation spectra, Lux-brightness characteristicsAbstract
Purpose: The interest to glasses Ge–Pb–S system is due to the opening possibilities of using them as a three-dimensional optical coating for active devices of integrated optics and multifunctional devices of semiconductor photonics, as well as electrophoto-graphic layers characterized by small value of the limit charging potentials and fast kinetics of dark half-decay.
Methods: This paper presents the comparative study results of radiative recombination and photoluminescence excitation (PLE) spectra, temperature dependence of photoluminescence, lux-brightness characteristics (LBC) of crystalline (c-) and glassy (g-) PbGeS3 in the temperature range 77–300 K.
Results: The PL spectra of ordered and disordered phases are qualitatively similar; they contain one intense broad radiation band, the energy position of its maximum at T = 77 K is hvmax = 1.04 eV for the crystal and it lies within 1.13–1.18 eV for the glass. The luminescence excitation spectrum is a bell-shaped curve with a maximum at the photon energy of 2.7 eV for the crystal and 2.26 eV for the glass, which are close to the band gap of ordered and disordered phases, it indicates on the band-type excitation character. The Stokse shift WS = EPLE – EPL for the crystal phase WSс = 1.65 eV is much larger than for the glassy phase WSg = 1.07 eV.
Lux-brightness characteristics (LBC) have the linear character for both PbGeS3 phases. Only slight shift of the maximum in PL spectra into the high energy region is observed with the intensity excitation increasing. Linear LBCs along with the exponential decay of PL indicate to the monomolecular character of recombination in both phases.
The similarity of PL and luminescence excitation spectra of c- and g-PbGeS3 as well as their comparison to the known results for c- and g-GeS2 (GeSе2) allow to conclude that the radiative processes in lead thiogermanate are determined primarily by the chemical nature of luminescence centers and poorly depend on the presence of long-range order, while the nonradiative processes are very sensitive to the structure disordering.
Conclusion: For the first time, in the photoluminescence spectra of both PbGeS3 phases, a wide band with a Gaussian-shaped contour was detected, with the emission band for glassy samples shifted by ~0.1 eV towards higher energies. The relatively large half-widths and the absence of the oscillatory structure of the luminescence bands indicate that in both phases a high heat release occurs, and the energy position of the band maxima in the emission spectra indicates the impurity nature of the luminescence and high stokes losses.
References
Bletskan D.I., Kabatsii V.M. Photoelectric properties of crystalline and glassy PbGeS3 // Open Journal of Inorganic Non-Metallic Materials. – 2013. – V. 3, № 3. – Р. 29–36.
Бордовский Г.А., Кастро Р.А. Изучение распределения релаксаторов в халькогенидных стеклообразных полупроводниках методом изотермической релаксации тока // Изв. Российского гос. пед. ун-та им. А.И. Герцена. – 2002. Т. 2, № 4. – С. 7–16.
Bletskan M.M., Bletskan D.I., Kabatsii V.M. Electronic structure of PbSnS3 and PbGeS3 semiconductor compounds with the mixed cation coordination // Semiconductor Physics, Quantum Electronics and Optoelectronics. – 2015. – V. 18, № 1. – P. 012–019.
Bletskan D.I., Kabacij V.N., Studenyak I.P., Frolova V.V. Edge absorption spectra of crystalline and glassy PbGeS3 // Optics and Spectroscopy. – 2007. – V. 103, № 5. – Р. 772–776.
Блецкан Д.И., Тербан В.П., Гурзан М.И., Поторий М.В. Получение, структура и фотоэлектрические свойства кристаллов PbGeS3 и Pb2GeS4 // Известия АН СССР. Неорган. материалы. – 1990. – Т. 26, № 3. – С. 509–514.
Ribes M., Qlivier-Fourcade J., Philippot E., Maurin M. Structure Cristalline d’un Tiogermanate de Plomb a Chaines Infinies (PbGeS3)n // Acta Crystallogr. B. – 1974. – V. 30, № 6. – P. 1391–1395.
Bletskan D. I., Hryha E. M., Kabatsii V. N. Raman and photoluminescence spectra of crystalline and glassy GeS2xSe2–2x solid solutions // Inorganic Materials. – 2007. – V.43, № 2. – Р. 105–111.
Street R.A. Luminescence in amorphous semiconductors // Adv. Phys. – 1976. – V. 25, № 1. – P. 397–417.
Васильев В.А., Мамонтова Т.А., Чернышев А.В. Механизм излучательной рекомбинации в стеклообразном и монокристаллическом GeSe2 // ФТТ. – 1982. – Т. 24, № 6. – С. 1769–1775.
Васильев В.А., Коломиец Б.Т., Ма-монтова Т.Н., Иванов Г.Хр. Излучательная рекомбинация в стеклообразных полупроводниках Ge2S3, Ge2Sе3 и Ge–Pb–S // Письма в ЖЭТФ. – 1975. – Т. 21, № 3. – С. 183–186.
Downloads
Published
Issue
Section
License
Copyright (c) 2018 Scientific Herald of Uzhhorod University.Series Physics

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
Authors who publish with this journal agree to the following terms:- Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgement of its initial publication in this journal.
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).