Specific features of slow electron backscattering by n-GaAs(111) surface
DOI:
https://doi.org/10.24144/2415-8038.2005.17.131-136Abstract
Elastic and inelastic backscattering of slow (0-3 eV) monoenergetic (FWHM ~ 50-70 meV) electrons by the (111) surface of Sn-doped GaAs studied. The fine structure in the spectra is related to the excitation of bulk and surface electron states.
The energy positions of the observed features are shown to correlate well with the energy distances between the maxima of the electron density of states calculated theoretically and determined by other experimental techniques as well as essentially complement them.
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