The influence of growth method and conditions on the electrical properties of SnS<sub>2</sub> crystals
DOI:
https://doi.org/10.24144/2415-8038.2015.37.70-78Keywords:
Tin disulphide, electrical conductivity, carrier mobility, effective massesAbstract
Research results of an electrical conductivity, Hall mobility and effective masses of electrons and holes in layered crystals SnS2, grown up by CTR, static sublimation and Bridgman methods are generalized. It is shown that the high value of anisotropy of electrical conductivity (c/||c = 103-104) is not associated with the anisotropy of effective masses of electrons and it is caused by the presence of plane extended defects of layers packing in rеal crystals, which are the potential barriers for electrons.
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