Photoinduced relaxation nanohardness amorphous films Gе<sub>40</sub>Sе<sub>60</sub>

Authors

  • В. В. Кузьма Uzhhorod national university, Ukraine
  • В. С. Біланич Uzhhorod national university, Ukraine
  • T. Чонаді Slovak Academy of Sciences, Institute of Materials Research, Slovakia
  • Ф. Лофай Slovak Academy of Sciences, Institute of Materials Research, Slovakia
  • M. Новак Slovak Academy of Sciences, Institute of Materials Research, Slovakia
  • Д. Немет Slovak Academy of Sciences, Institute of Materials Research, Slovakia
  • В. Ю. Лоя Institute of Electron Physics NAS Ukraine, Ukraine
  • В. М. Різак Uzhhorod national university, Ukraine

DOI:

https://doi.org/10.24144/2415-8038.2015.37.123-127

Keywords:

Nanohardness, pphotoinduced changes, thinks film, chalcogenide glasses, Ge-As-Se

Abstract

The results of research nanohardness of amorphous films Ge40Se60 irradiated with a laser beam with a wavelength of 655 nm. The exponential nanohardness decrease of Ge40Se60 film during laser irradiation and nanohardness increase, similar to the original value after termination of exposure, were found. The numerical value of relaxation options for photoinduced changes of nanohardness was found. The correlation dynamics of photoinduced changes of nanohardness for the same process, which was identified in the study "in situ" changes of microhardness of Ge40Se60 film, was showed under similarexperimental conditions. The results are explained under the intramolecular photoinduced plasticity model.

References

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Published

2015-07-01

Issue

Vol. 37 (2015)

Section

Статті

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