Термоэлектрические коэффициенты в транспортной модели Ландауэра-Датты-Лундстрома
DOI :
https://doi.org/10.15587/2313-8416.2015.35893Mots-clés :
нанофизика, наноэлектроника, молекулярная электроника, термоэлектрические коэффициенты, интегралы Ферми-ДиракаRésumé
С позиций концепции «снизу-вверх» транспортной модели Ландауэра –Датты-Лундстрома строго выведены основные уравнения термоэлектричества с соответствующими транспортными коэффициентами для 1D проводников в баллистическом режиме и для 3D проводников в диффузионном режиме с произвольной дисперсией и любого масштаба. Приведены термоэлектрические коэффициенты для 1D, 2D и 3D проводников с параболической дисперсией в баллистическом и диффузионном режимах через стандартные интегралы Ферми-Дирака.
Références
Kruglyak, Yu. A. (2013). The Generalized Landauer-Datta-Lunstrom Electron Transport Model. Nanosystems, Nanomaterials, Nanotechnologies, 11 (3), 519–549. Erratum: ibid, (2014)., 12 (2), 415.
Kruglyak, Yu. A. (2013). From Ballistic Conductivity to Diffusional in the Landauer-Datta-Lunstrom. Transport Model, Nanosystems, Nanomaterials, Nanotechnologies, 11 (4), 655–677.
Kruglyak, Yu. A. (2014). Thermoelectric phenomena and devices in the Landauer-Datta-Lunstrom approach. ScienceRise, 3/2(5), 73–88. doi: 10.15587/2313-8416.2014.27967
Lundstom, M., Guo, J. (2006). Nanoscale Transistors: Physics, Modeling, and Simulation. Berlin: Springer, 218.
Kim, R., Lundstrom, M. S. Notes on Fermi – Dirac Integrals. Purdue University. Available at: www.nanohub.org/resources/5475
Lundstrom, M., Jeong, C. (2013). Near-Equilibrium Transport: Fundamentals and Applications. Hackensack, New Jersey: World Scientific Publishing Company. Available at: www.nanohub.org/resources/11763
Sommerfeld, A. (1928). An electronic theory of the metals based on Fermi's statistics. Journal of Physics, 47 (1), 1.
Ashcroft, N. W., Mermin, N. D. (1979). Solid State Physics (Philadelphia: Suanders College, 486.
Geballe, T. N., Hull, G. W. (1954). Seebeck Effect in Germanium, Physical Review, 94 (5), 1134–1140. doi: 10.1103/physrev.94.1134
Pierret, R. F. (1996). Semiconductor Device Fundamentals. Reading, MA: Addison–Wesley, 792.
Kim, R. S. (2011). Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices. West Lafayette: Purdue University, 218.
Supriyo, D. (2012). Lessons from Nanoelectronics: A New Perspective on Transport. Hackensack, New Jersey: World Scientific Publishing Company, 473. Available at: www.nanohub.org/courses/FoN1
Kruglyak, Yu. A., Kruglyak, N. Yu., Strikha, М. V. (2013). Lessons of nanoelectronics. Thermoelectric phenomena in «bottom – up» approach, Sensor Electronics Microsys. Tech., 13 (1), 6–21.
Kruglyak, Yu. A. (2013). Lessons of nanoelectronics. 4. Thermoelectric phenomena in «bottom – up» approach. Physics in Higher Education, 19 (4), 70–85.
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