Electron scattering on Si<sup>-</sup> ion
DOI:
https://doi.org/10.24144/2415-8038.2012.31.129-135Keywords:
Negative ion of silicon, Electron scattering, R-matrix, B-spline, The integral and differential cross sectionsAbstract
The B-spline R-matrix method is used to investigate the electron-impact scattering on the negative ion of silicon in the energy regions up to 100 eV. The multiconfiguration Hartree-Fock method with non-orthogonal orbitals is employed for an accurate representation of the target wave functions. The e + Si− scattering integral cross sections are calculated for all transitions between bound 1s22s22p63s23p3 4So, 2Do, and 2Po states of negative ion. The 3D-suface of energy-angle dependence of correspond differential cross sections are presented.
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