Participation of oxygen and carbon in formation of oxidation-induced stacking faults in monocrystalline silicon
DOI:
https://doi.org/10.15587/2313-8416.2015.53451Keywords:
silicon, single crystal, oxygen, carbon, oxidation-induced stacking fault, fusion, heater, Chochralsky method, microdefectsAbstract
It is experimentally established, that density of oxidation-induced stacking faults (OISF) in the boron doped monocrystalline silicon plates, that above, than it is more relation of oxygen atoms concentration to carbon atoms concentration in them.
On research results of geometry of OISF rings in the different sections of single-crystal geometry of areas is reconstructed with their different closeness. At adjustment of the growing modes of single-crystals of silicon the increase of output of suitable product is observed
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Copyright (c) 2015 Иван Федорович Червоный, Алексей Вадимович Бубинец
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