Analysis of a semiconductor vibration and frequency sensor construction specifity
DOI :
https://doi.org/10.15587/2313-8416.2018.143414Mots-clés :
semiconductor, filamentous monocrystal, tensotransducer, resonator, frequency, sensitive element, tensor signal, deformationRésumé
The model of direct transducering tensoresistive method of semiconductor filamentous monocrystal mechanical oscillations into an electrical signal and the principle of deformation into frequency transducer (sensor) construction are considered in this paper. The connections of output tensor signal parameters with resonator own geometric dimensions, mechanical stress and elasticity of the crystals, amplitude and their mechanical oscillations frequency are established. The value of tensor signal, which arises due to bending and tension of monocrystals under cyclic loads, is estimated, the specificity of their properties and structure is revealed
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(c) Tous droits réservés Roman Baitsar, Roman Kvit 2018
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