Analysis of a semiconductor vibration and frequency sensor construction specifity

Авторы

  • Roman Baitsar Национальный университет «Львовская политехника» ул. С. Бандеры, 12, г. Львов, Украина, 79013, Ukraine https://orcid.org/0000-0002-7926-8071
  • Roman Kvit Национальный университет «Львовская политехника» ул. С. Бандеры, 12, г. Львов, Украина, 79013, Ukraine https://orcid.org/0000-0002-2232-8678

DOI:

https://doi.org/10.15587/2313-8416.2018.143414

Ключевые слова:

semiconductor, filamentous monocrystal, tensotransducer, resonator, frequency, sensitive element, tensor signal, deformation

Аннотация

The model of direct transducering tensoresistive method of semiconductor filamentous monocrystal mechanical oscillations into an electrical signal and the principle of deformation into frequency transducer (sensor) construction are considered in this paper. The connections of output tensor signal parameters with resonator own geometric dimensions, mechanical stress and elasticity of the crystals, amplitude and their mechanical oscillations frequency are established. The value of tensor signal, which arises due to bending and tension of monocrystals under cyclic loads, is estimated, the specificity of their properties and structure is revealed

Биографии авторов

Roman Baitsar, Национальный университет «Львовская политехника» ул. С. Бандеры, 12, г. Львов, Украина, 79013

Доктор технических наук, профессор

Кафедра информационно-измерительных технологий

Roman Kvit, Национальный университет «Львовская политехника» ул. С. Бандеры, 12, г. Львов, Украина, 79013

Кандидат физико-математических наук, доцент

Кафедра высшей математики

Библиографические ссылки

Langdon, R. M. (1985). Resonator sensors – a rewiew. Journal of Physics E: Scientific Instruments, 18 (2), 103–115. doi: https://doi.org/10.1088/0022-3735/18/2/002

Haueis, M., Dual, J., Cavalloni, C., Gnielka, M., Buser, R. A. (2000). Packaged bulk micromachined resonant force sensor for high-temperature applications. Design, Test, Integration, and Packaging of MEMS/MOEMS. doi: https://doi.org/10.1117/12.382278

Remtema, T., Lin, L. (2001). Active frequency tuning for micro resonators by localized thermal stressing effects. Sensors and Actuators A: Physical, 91 (3), 326–332. doi: https://doi.org/10.1016/s0924-4247(01)00603-3

Sviličić, B., Mastropaolo, E., Cheung, R. (2014). A MEMS Filter Based on Ring Resonator with Electrothermal Actuation and Piezoelectric Sensing. Procedia Engineering, 87, 1406–1409. doi: https://doi.org/10.1016/j.proeng.2014.11.706

Zhang, W.-M., Hu, K.-M., Peng, Z.-K., Meng, G. (2015). Tunable Micro- and Nanomechanical Resonators. Sensors, 15 (10), 26478–26566. doi: https://doi.org/10.3390/s151026478

Liu, H., Zhang, C., Weng, Z., Guo, Y., Wang, Z. (2017). Resonance Frequency Readout Circuit for a 900 MHz SAW Device. Sensors, 17 (9), 2131. doi: https://doi.org/10.3390/s17092131

Druzhinin, A., Maryamova, I., Kutrakov, A., Liakh-Kaguy, N. (2011). Silicon whiskers for sensor electronics. Materials of XIII International conference Physics and technology of thin films and nanosystems. Ivano-Frankivsk, 1, 29.

Druzhinin, A., Kutrakov, A., Maryamova, I. (2011). Tensoresistive pressure sensors based on filamentous silicon crystals for a wide range of temperatures. Bulletin of the Lviv Polytechnic National University. Electronics, 708, 64–71.

Rak, V., Baitsar, R. (2007). A random errors estimation of the measuring generator of the resonance sensors. Sensors and systems, 5, 16–21.

Baitsar, R., Rak, V., Zelisko, Y. (2011). A temperature and pressure influence on the output frequency of the measuring generator of the resonance sensor. Measuring equipment and metrology, 72, 88–93.

Загрузки

Опубликован

2018-10-09

Выпуск

Раздел

Технические науки