Наноэлектроника «снизу – вверх»: возникновение тока, обобщенный закон ома, упругий резистор, моды проводимости, термоэлектричество
DOI:
https://doi.org/10.15587/2313-8416.2015.45700Słowa kluczowe:
наноэлектроника, упругий резистор, моды проводимости, обобщенный закон Ома, графен, термоэлектрикиAbstrakt
В рамках концепции «снизу – вверх» современной наноэлектроники рассматриваются общие вопросы электронной проводимости, причины возникновения тока и роль электрохимических потенциалов и фермиевских функций, модель упругого резистора, баллистический и диффузионный транспорт, моды проводимости, проводники n- и p-типа, а также графен и дается новая обобщенная формулировка закона Ома. Далее рассматриваются термоэлектрические явления Зеебека и Пельтье, показатели качества и оптимизация термоэлектриков, баллистический и диффузионный транспорт фононов и его роль в теплопроводности
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