Nanoelectronics «bottom – up»: the role of electrostatics and contacts
DOI:
https://doi.org/10.15587/2313-8416.2015.56272Keywords:
nanophysics, nanoelectronics, molecular electronics, diffusion-drift model, saturation current, role of contactsAbstract
Within the concept of «bottom – up» approach of modern nanoelectronics the diffusion-drift model of a current on the basis of the Boltzmann transport equation, the role of the external electric field beyond the linear response regime, field-effect transistor and saturation current, the role of conductor charging, the point and extended models of a conductor, the role of contacts, the model of p – n junctions, the generation of a current in a conductor with asymmetric contacts are discussed
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