Degradation process simulation of computer components of discrete devices

Authors

DOI:

https://doi.org/10.15587/2312-8372.2015.51795

Keywords:

reliability, discrete device, composite material, analysis, simulation, physical degradation

Abstract

Formation and research of the materials with predetermined properties is one of the leaders in the research field of physical degradation. During the process of creating computer components we have to combine different types of homogeneous materials. Through a combination of these materials it is obtained composite materials, for which the important problem is durability and reliability.

The process of material degradation of discrete device is "slowly" in relation to the depreciation time of the device. Physical degradation of computer components leads to malfunction of discrete devices. Preliminary simulation of the physical change of the material under certain boundary conditions allows pre-assess the risks in the process of creating discrete device, and in the process of checking reliability.

The combination zones of two different materials are attended in the article. Physical and chemical processes that cause the appearance of interphase entities have different origins. Hence the need for a model development of specific class of problems in mechanics of interfacial interaction is occurred.

It is simulated the physical behavior of materials of computer components of discrete devices and investigated the conditions of their degradation. The material behavior is conducted in the environment Matlab, simulating the behavior of the stress function from values of which is depended a strength (brittleness) of the material. Process simulation allows carrying out preliminary assessment of the behavior of composite components of discrete device that accelerates the research process of degradation over time.

The brittleness of the material causes a malfunction of the device due to improper current flow in the  transitions and reduces their reliability.

Author Biography

Ольга Віталіївна Кравченко, Cherkasy State Technological University, str. Shevchenko 460, Cherkasy, 18006

Senior Lecturer

Department of Information Technology Design

References

  1. Hansen, M., Anderko, K. (1962). Struktura dvoinyh splavov. Moscow: Metallurgizdat, 608.
  2. In: Yakubovskyi, S. V. (1985). Analohovi ta tsyfrovi intehralni mikroskhemy. Ed. 2. Moscow: Radio i zviazok, 432.
  3. Pasynkiv, V. V., Sorokin, V. S. (1986). Materialy elektronnoi tekhniky. Ed. 2. Moscow: Vyshcha Shkola, 367.
  4. Wong, H.-S. P., Mitra, S., Akinwande, D., Beasley, C., Chai, Y. et al. (2011, December). Carbon nanotube electronics – Materials, devices, circuits, design, modeling, and performance projection. 2011 International Electron Devices Meeting. Institute of Electrical & Electronics Engineers (IEEE), 23.1.1–23.1.4. doi:10.1109/iedm.2011.6131594
  5. Mehta, J. U., Borders, W. A., Liu, H., Pandey, R., Datta, S., Lunardi, L. (2015). III-V Tunnel FET Model With Closed-Form Analytical Solution. IEEE Transactions on Electron Devices. Institute of Electrical & Electronics Engineers (IEEE), 1. doi:10.1109/ted.2015.2471808
  6. Maffezzoni, P., Daniel, L., Shukla, N., Datta, S., Raychowdhury, A. (2015, September). Modeling and Simulation of Vanadium Dioxide Relaxation Oscillators. IEEE Transactions on Circuits and Systems I: Regular Papers, Vol. 62, № 9, 2207–2215. doi:10.1109/tcsi.2015.2452332
  7. Zlatkin, A., Kravchenko, O., Vovchanovskyi, O. (2014). Analysis of causes degradation of materials of discrete devices of computer systems. Technology Audit And Production Reserves, 5(3(19)), 37–41. doi:10.15587/2312-8372.2014.27934
  8. Kravchenko, O. V. (2003). Matematychna model mizhfazovoi vzaiemodii v kompozytakh ta utochnennia modeli metodamy obchysliuvalnoi matematyky. Visnyk Skhidnoukrainskoho natsionalnoho universytetu im. V. Dalia, 7 (65), 84–88.
  9. Kravchenko, O. V. (2015). Issledovanie prichin degradatsii materiala diskretnyh ustroistv dlia obespecheniia ih nadezhnosti. Materiály XI mezinárodní vědeckopraktická konference «Věda a technologie: krok do budoucnosti – 2015». Technické vědy. Matematika.Moderní informační technologie. Výstavba a architektura, Díl. 17. Praha: Publishing House «Education and Science», 77–80.
  10. Kravchenko, O. V. (2015). Prognozirovanie nadezhnosti diskretnyh ustroistv na osnove modelirovaniia protsessov degradatsii kampozitnyh materiallov komp'iuternyh. Sovremennyi nauchnyi vestnik, 9 (256), 77–82.

Published

2015-09-22

How to Cite

Кравченко, О. В. (2015). Degradation process simulation of computer components of discrete devices. Technology Audit and Production Reserves, 5(2(25), 23–26. https://doi.org/10.15587/2312-8372.2015.51795

Issue

Section

Information Technologies: Original Research