Tetyana Kritska

Zaporizhzhia National University, Ukraine
Doctor of Technical Sciences, Professor, Head of the Department
Department of Electronics, Information Systems and Software
Engineering Educational and Scientific Institute name of Yu. M. Potebny

Scopus ID: 6506321986
Researcher ID: JYQ-3412-2024
Google Scholar profile: link
ORCID ID: https://orcid.org/0000-0001-6933-0460

Selected Publications:

  1. Kritska, T., Bazhenov, Y. V. (2024). "SILICON FROM SAND" – STAGE OF DEVELOPMENT OF SEMICONDUCTOR SILICON TECHNOLOGY: EXPERIENCE AND PROSPECTS. Scientific Journal "Metallurgy", 2, 95– https://doi.org/10.26661/2071-3789-2023-2-12
  2. Bytkin, S. V., Krytskaja, T. V. (2023). Radiation Resistance of Test npn IC Transistors with Dielectric Insulation, Manufactured on Silicon, Isovalently Doped with Germanium (SiGe). Visnyk NTUU KPI Seriia - Radiotekhnika Radioaparatobuduvannia, 91, 72– Available at: https://radap.kpi.ua/radiotechnique/article/view/1752
  3. Kritskaia, T., Sukach, M., Bazhenov, Y. (2022). Quartz sand is an affordable inexpensive raw material for technologies of electronics and photovoltaics. Pidvodni Tehnologii, 12, 63–77. https://doi.org/10.32347/uwt.2022.12.1801
  4. Kritskaia, T., Sukach, M., Bazhenov, Y. (2022). Silicon from sand is a promising technology for producing silicon of semiconductor quality. Transfer of Innovative Technologies, 29–44. https://doi.org/10.32347/tit.2022.51.0203
  5. Jarkin, V. N., Kisarin, O. A., Kritskaya, T. V. (2021). Methods of trichlorosilane synthesis for polycrystalline silicon production. Part 2: Hydrochlorination and redistribution. Modern Electronic Materials, 7 (2), 33–43. https://doi.org/10.3897/j.moem.7.2.65572
  6. Jarkin, V. N., Kisarin, O. A., Kritskaya, T. V. (2021). Methods of trichlorosilane synthesis for polycrystalline silicon production. Part 1: Direct synthesis. Modern Electronic Materials, 7 (1), 1–10. https://doi.org/10.3897/j.moem.7.1.64953
  7. Kritskaya, T. V., Zhuravlev, V. N., Berdnikov, V. S. (2020). Potential of using inert gas flows for controlling the quality of as-grown silicon single crystal. Modern Electronic Materials, 6 (1), 1–7. https://doi.org/10.3897/j.moem.6.1.53248
  8. Kobeleva, S. P., Anfimov, I. M., Berdnikov, V. S., Kritskaya, T. V. (2019). Possible causes of electrical resistivity distribution inhomogeneity in Czochralski grown single crystal silicon. Modern Electronic Materials, 5 (1), 27–32. https://doi.org/10.3897/j.moem.5.1.46315